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Product Details:
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| Usage: | Force Measurement | Type: | Semiconductor Strain Gauge |
|---|---|---|---|
| Load Range: | 1kN 2kN 3kN 4.5kN 9kN | Load Direction: | Tension/Compression |
| Mounting Hole: | M12 (1/2-20 UNF) |
Semiconductor Strain Gauge High Sensitivity Load Cell With 30mV/V Output
The FSLP semiconductor strain gauge load cell is a compact, high-performance tension compression load cell engineered for precise bidirectional force measurement. Designed for both push pull force sensor applications, it accurately measures compression and tension forces in dynamic and static conditions. Built from high-grade stainless steel, the FSLP ensures superior durability, corrosion resistance, and long-term stability, even in harsh industrial environments. Available in rated capacities of 1kN, 2kN, 3kN, 4.5kN, and 9kN, it offers exceptional versatility for mechanical testing, process control, and automation systems. With its compact design and robust structure, the FSLP semiconductor strain gauge load cell delivers consistent and repeatable performance for a wide range of precision measurement applications.
As a high output load cell, the FSLP employs advanced semiconductor strain gauge technology to achieve high sensitivity, minimal deformation, and rapid dynamic response. These attributes make it ideal for challenging applications such as dynamic load testing, robotic force feedback, and precision assembly monitoring—areas where conventional strain gauge sensors may not meet performance expectations. The sensor’s dual-thread mounting options (M12 and 1/2-20 UNF) allow for flexible installation and smooth integration with existing mechanical setups. Combining excellent linearity, strong overload protection, and stable output, the FSLP tension compression load cell stands out as a reliable, customizable solution for engineers and researchers seeking high precision in bidirectional force measurement. This push pull force sensor ensures outstanding accuracy, responsiveness, and durability in every force detection scenario.
Specifications
| Rated capacity |
1kN 2kN 3kN 4.5kN 9kN |
| Rated output | 30 mV/V |
| Excitation | 3-5V |
| Zero balance | ±1mV/V |
| Nonlinearity |
±0.3% of R.O. |
| Hysteresis |
±0.3% of R.O. |
| Nonrepeatability |
±0.1% of R.O. |
| Creep(3min) | ±0.2% of R.O. |
| Safe overload | 150% of F.S. |
| Ultimate overload | 250% of F.S. |
| Compensated temperature | 0...+50oC |
| Operating temperature | -20...+70oC |
| Temperature shift zero | ±0.5% R.O./oC |
| Temperature shift span | ±0.5% R.O./oC |
| Input resistance | 400±50 ohms |
| Output resistance | 350±50 ohms |
| Insulation resistance | >2000M ohms |
| Ingress protection | IP65 |
| Material of element | Stainless steel |
| Cable | Ø3*3000mm 4-core shielded |
| Wiring code | Red--Excitation+ Black--Excitation- Green--Signal+ White--Signal- |
Semiconductor Strain Gauge High Output Load Cell With 30mV/V Sensitivity
Contact Person: Mr. Tarik Lu
Tel: +86 755 84536383
